Gallium Nitride (GaN) material is one of the emerging material for substrates in the semiconductor industry and holds the capability to substitute the conventional substrates. Due to high electron mobility, low switching losses and less lattice mismatches, the material is gradually gaining adoption into various products such as optoelectronics, power electronics, and so on. Request a Sample @ http://industryarc.com/pdfdownload.aspx?id=1264
The GaN Substrates Market report is a thorough study of different types of substrates, devices, and end use industries which employ gallium nitride. There are four types of substrates, namely, GaN on Sapphire, GaN on Si, GaN on SiC and GaN on GaN. Here, the market is dominated by foreign substrates, where GaN is grown by epitaxial methods onto sapphire, silicon and silicon carbide. The bulk GaN substrates, that is, GaN grown on core GaN substrate, are very less in volume and are emerging. The market is also segmented by the product/device which is made on these substrates into LEDs, Lasers, Power Switching Devices and others. Finally, the market is studied across end use industries such as Healthcare, Automotive, Military and Communication, General Lighting, Consumer Electronics, Power, Telecom, and others.
The market size in 2014 was $2.5 billion, majorly contributed by 4-inch substrates. However, there is a pressing demand for larger diameter substrates. Making devices on smaller diameters leads to wastage of space and edges whereas larger diameters help in not only saving wastage but also efficient devices. The U.S, Japan, Korea and some European countries are already forward in adopting larger diameters. Conversely, leading countries in LED market, China and Taiwan are in the transition phase, shifting to 6-inch and 4-inch substrates from 2-inch substrates. LED manufacturers in these countries are now actively making efforts to bring efficiency in production costs and the production process. It is estimated that in China, by 2020, number of LED making MOCVD reactors making devices on 6-inch substrate will be highest. Moreover, production of larger bulk substrates is also estimated to start by 2018 and grow significantly by 2020. Therefore, in the next five years, the market is projected to incline towards larger diameters such as 6-inch and 8-inch.
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Currently, the GaN substrates market is led by the LED and Lasers, but, in the period of 2015-2020, power electronics are forecast to be the growth segment. In this industry too, players are looking out for larger diameter substrates to bring cost efficiency in production. The market today is dominated by 2-inch and 4-inch substrates. However, as the end use industries demand devices that can withstand higher powers with low losses, the core components power electronics are expected to become extra effective and adopt 6-inch substrates.
Asia-Pacific region is the major producer as well as the consumer for this market. The market size in 2014 was nearly equal to $1 billion. The production companies of sapphire, GaN, SiC production are located in countries such as Japan, China, and Korea contributing to over 80% of the production.
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